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About
Episil Precision Inc specializes in GaN on Si epitaxial growth technology, utilizing MOCVD to grow AlGaN and GaN composite buffer layers on silicon substrates. The company has developed proprietary techniques to manage the thickness variations of these buffer layers, which mitigate stress issues between GaN and silicon substrates, improving wafer defects and providing high-performance and reliable components. They offer production services for 8-inch GaN/Si epitaxial wafers with voltage ratings from 100V to 600V.
Products & Services
8-inch GaN/Si epitaxial wafers
Quick Facts
- Location
- Taiwan
- Category
- Electronics Manufacturing
