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About
ALD at Moscow Institute of Physics and Technology focuses on atomic layer deposition (ALD), a thin film deposition technique based on sequential gas‑phase chemical processes. Considered a subclass of chemical vapour deposition, ALD uses two precursors that react with material surfaces one at a time in a self‑limiting manner, allowing controlled film growth. The method is essential for semiconductor device fabrication and for synthesizing nanomaterials. The group provides expertise in ALD research, publications, and partnerships, contributing to advanced material engineering.
Quick Facts
- Company Size
- 1-10
- Category
- Chemical Companies
