Semiconia delivers silicon carbide (SiC) power solutions, specializing in discrete SiC MOSFETs and SiC Schottky Barrier Diodes. The company’s February 2025 release features a 1200 V 22 A 80 mΩ SiC MOSFET (gen 2). Product lines include 650 V and 1200 V diodes, bare die, packaging devices, and 6‑inch SiC wafers and poly‑SiC substrates for high‑quality SBD and MOSFET applications. Semiconia serves customer‑specific needs and collaborates with global semiconductor partners. Headquarters are located in Seoul, South Korea.