The SISC provides a unique forum for device engineers, solid-state physicists, and materials scientists to discuss issues of common interest. Principal topics for discussion at SISC are semiconductor/insulator interfaces, the physics of insulating thin films, and the interaction among materials science, device physics, and state-of-the-art technology. The first SISC meeting was held in 1965 and attendance was by invitation. The upcoming conference, now public, will be held in San Diego, right after the IEDM. An important goal of the conference is to provide an environment that encourages interplay between scientific and technological issues. Invited and contributed talks, as well as a lively poster sessions, are presented in an informal setting designed to encourage discussion, and conference participants enjoy numerous opportunities for social gatherings with renown scientists and engineers. The conference addresses a wide range of interface-related topics ranging from the traditional silicon-based devices, including the SiC and SiGe systems, to high-mobility semiconductor interfaces and emerging areas beyond the state-of-the-art. Wednesday tutorial lecture, invited and contributed talks are complemented by informal events designed to encourage lively discussion and debate.
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